kw.\*:("Zinc Séléniure")
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Luminescent purity diagnostics of ZnSe crystalsVAKULENKO, O. V; KRAVCHENKO, V. M; JANCHUK, Z. Z et al.SPIE proceedings series. 1998, pp 222-226, isbn 0-8194-2808-6Conference Paper
(Zn,Cd)Se/ZnSe quantum-well lasers : excitonic gain in an inhomogeneously broadened quasi-two-dimensional systemDING, J; HAGEROTT, M; ISHIHARA, T et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 16, pp 10528-10542, issn 0163-1829Article
Optical gain of CdZnSe/ZnSe quantum well lasersAHN, D; YOO, T.-K; LEE, H. Y et al.Applied physics letters. 1991, Vol 59, Num 21, pp 2669-2671, issn 0003-6951Article
Characterization of epitaxial ZnSe films grown by pulsed laser depositionGANGULI, T; INGALE, A; VEDVYAS, M et al.SPIE proceedings series. 1998, pp 1181-1184, isbn 0-8194-2756-X, 2VolConference Paper
Spatial distribution of electroluminescence in ZnSe diodes with epitaxial I layerJONES, A. P. C; BRINKMAN, A. W; RUSSELL, G. J et al.Semiconductor science and technology. 1986, Vol 1, Num 1, pp 41-44, issn 0268-1242Article
The influence of the method of deposition on the microstructure and optical properties of junctions of ZnSe with indium tin oxideSAIDANE, A; KIRK, D. L.Thin solid films. 1986, Vol 144, Num 1, pp 49-67, issn 0040-6090Article
Blue light emission from ZnSe p-n junctionsNISHIZAWA, J; ITOH, K; OKUNO, Y et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 2210-2216, issn 0021-8979Article
The electrooptical properties of ZnSe-ZnTe heterojunctionsFIRSZT, F; LOZYKOWSKI, H. J.Acta physica Polonica. A. 1983, Vol 64, Num 1, pp 9-19, issn 0587-4246Article
Luminescence of ZnSe(Te) crystals melt : grown from the charge enriched in seleniumRYZHIKOV, V. D; GAL'CHINETSKII, L. P; GALKIN, S. N et al.SPIE proceedings series. 1998, pp 302-304, isbn 0-8194-2808-6Conference Paper
Pressure induced B3-B1 structural phase transformation and elastic properties of semi-magnetic semiconductors Zn1-xMxSe (M = Mn, Fe and Cd)VARSHNEY, Dinesh; SHARMA, U; KAURAV, N et al.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 7, issn 0953-8984, 075204.1-075204.10Article
Modulation-doped ZnSe:Mn dc thin-film electroluminescent devicesKOBAYASHI, M; MINO, N; INUZUKA, H et al.Journal of applied physics. 1985, Vol 57, Num 10, pp 4706-4710, issn 0021-8979Article
Femtosecond evolution of semiconductor microcavity modesVINOGRADOV, E. A; DOBRYAKOV, A. L; FARZTDINOV, V. M et al.SPIE proceedings series. 1998, pp 14-18, isbn 0-8194-2808-6Conference Paper
Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopyTU, R. C; SU, Y. K; HUANG, Y. S et al.SPIE proceedings series. 1998, pp 325-337, isbn 0-8194-2873-6Conference Paper
Infrared evanescent-field microscope using CO2 laser for reflectance measurementNAKANO, T; KAWATA, S.Optik (Stuttgart). 1993, Vol 94, Num 4, pp 159-162, issn 0030-4026Article
Caractéristiques d'électroluminescence d'une diode luminescente à base de ZnSeGEORGOBIANI, A. N; ILYUKHINA, Z. P; LEVONOVICH, B. N et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 3, pp 408-411, issn 0015-3222Article
Properties of photoluminescence from ZnTe-ZnSe superlatticesKUWABARA, H; FUJIYASU, H; AOKI, M et al.Japanese journal of applied physics. 1986, Vol 25, Num 9, pp L707-L709, issn 0021-4922, 2Article
Electrical properties of n-n ZnSe/GaAs heterojunctionsBAWOLEK, E. J; WESSELS, B. W.Thin solid films. 1985, Vol 131, Num 3-4, pp 173-183, issn 0040-6090Article
ZnSe light-emitting diodesREN, J; BOWERS, K. A; SNEED, B et al.Applied physics letters. 1990, Vol 57, Num 18, pp 1901-1903, issn 0003-6951Article
CuInSe2/ZnSe solar cells using reactively sputter-deposited ZnSeNOUHI, A; STIRN, R. J; HERMANN, A et al.Photovoltaic specialists conference. 19. 1987, pp 1461-1465Conference Paper
Calculated room-temperature threshold current densities for the visible II-VI ZnCdSe/ZnSe quantum-well diode lasersAGGARWAL, R. L; ZAYHOWSKI, J. J; LAX, B et al.Applied physics letters. 1993, Vol 62, Num 23, pp 2899-2901, issn 0003-6951Article
Optical properties and device prospects of ZnSe-based quantum structuresNURMIKKO, A. V; GUNSHOR, R. L; KOBAYASHI, M et al.Journal of crystal growth. 1992, Vol 117, Num 1-4, pp 432-440, issn 0022-0248Conference Paper
Chemical vapour transport grown ZnSe and NiZnSe crystals for infrared windowsRABAGO, F; VINCENT, A. B; JOSHI, N. V et al.Materials letters (General ed.). 1990, Vol 9, Num 11, pp 480-482, issn 0167-577XArticle
Zn1-xCdxSe (X=0.2-0.3) single-quantum-well laser diodes without GaAs buffer layersHAYASHI, S; TSUJIMURA, A; YOSHII, S et al.Japanese journal of applied physics. 1992, Vol 31, Num 10B, pp L1478-L1480, issn 0021-4922, 2Article
Photocurrent spectroscopy of excitonic transitions in CdZnS/ZnS strained-layer superlatticesOHNO, T; TAGUCHI, T.Japanese journal of applied physics. 1991, Vol 30, Num 8B, pp L1512-L1515, issn 0021-4922, 2Article
Nonlinear excitonic absorption in (Zn,Mn)Se superlattices and ZnSe filmsANDERSEN, D. R; KOLODZIEJSKI, L. A; GUNSHOR, R. L et al.Applied physics letters. 1986, Vol 48, Num 23, pp 1559-1561, issn 0003-6951Article